Samsung develops 400-layer NAND chip for high-capacity SSDs

Samsung continues to assert its leadership position in the technology race with its plan to manufacture 400-layer stacked NAND memory chips, projected for release in 2026. This groundbreaking advancement will pave the way for ultra-high-capacity SSDs, meeting the massive data storage demands of artificial intelligence (AI).

Currently, Samsung places high expectations on its 10th-generation V10 NAND chip, developed using advanced BV NAND technology. This technology enables the production of memory cells and peripheral circuits on separate wafers, which are then combined into a complete chip. This approach minimizes heat output and optimizes performance. The bit density per unit area of the V10 NAND chip is 1.6 times higher than the previous generation, enabling the production of ultra-high-capacity SSDs, potentially exceeding the 200 TB threshold. This will be an ideal solution for AI applications that require massive data processing capabilities.

Beyond the 400-layer NAND chip, Samsung has mapped out an ambitious development roadmap, aiming to release the V11 NAND chip with 50% faster data transfer speeds by 2027 and even developing NAND chips with over 1,000 layers by 2030 to strengthen its market leadership.

In addition to NAND, Samsung is also focusing on developing new DRAM lines, targeting compact sizes under 10 nm and superior performance. With these relentless efforts, the South Korean tech giant is helping to shape the future of storage technology, ushering humanity into the AI era with 'limitless' data processing potential.

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